IRS23365DMTRPBF

半桥 IGBT MOSFET 灌:180mA 拉:380mA

Summary of Features:

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Drives up to six IGBT/MOSFET power devices

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Gate drive supplies up to 20 V per channel

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Integrated bootstrap functionality

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Over-current protection

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Over-temperature shutdown input

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Advanced input filter

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Integrated deadtime protection

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Shoot-through cross conduction protection

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Undervoltage lockout for Vcc and Vbs

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Enable/disable input and fault reporting

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Adjustable fault clear timing

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Separate logic and power grounds

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3.3 V input logic compatible

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Tolerant to negative transient voltage

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Designed for use with bootstrap power supplies

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Matched propagation delays for all channels

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-40C to 125C operating range