IXYS SEMICONDUCTOR IXTP16N50P 晶体管, MOSFET, 极性FET, N沟道, 16 A, 500 V, 400 mohm, 10 V, 5.5 V
The is a PolarHT™ N-channel enhancement-mode standard Power MOSFET with fast intrinsic diode. It features reduced static drain-to-source ON-resistance and high power density. It is suitable for laser drivers, switched-mode and resonant-mode power supplies.
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- International standard packages
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- Avalanche rating
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- Low package inductance
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- Easy to mount
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- Space saving
额定电压DC 500 V
额定电流 16.0 A
针脚数 3
漏源极电阻 0.4 Ω
极性 N-Channel
耗散功率 300 W
阈值电压 5.5 V
输入电容 2.25 nF
栅电荷 43.0 nC
漏源极电压Vds 500 V
连续漏极电流Ids 16.0 A
上升时间 25 ns
反向恢复时间 400 ns
输入电容Ciss 2250pF @25VVds
额定功率Max 300 W
下降时间 22 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 300W Tc
安装方式 Through Hole
引脚数 3
封装 TO-220-3
封装 TO-220-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
制造应用 Power Management, 电机驱动与控制, 机器人, Robotics, 电源管理, Motor Drive & Control
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IXTP16N50P IXYS Semiconductor | 当前型号 | 当前型号 |
IXFA16N50P IXYS Semiconductor | 完全替代 | IXTP16N50P和IXFA16N50P的区别 |
IXTA16N50P IXYS Semiconductor | 完全替代 | IXTP16N50P和IXTA16N50P的区别 |
IXFP16N50P IXYS Semiconductor | 类似代替 | IXTP16N50P和IXFP16N50P的区别 |