半桥 IGBT MOSFET 灌:60mA 拉:130mA
Summary of Features:
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Drives IGBT/MOSFET power devices
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Gate drive supplies up to 20 V per channel
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Integrated deadtime protection 100ns
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Shoot-through cross-conduction protection
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Undervoltage lockout for VCC for VBS
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3.3 V, 5 V , 15 V input logic compatible
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Output in phase with input
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Tolerant to negative transient voltage
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Designed for use with bootstrap power supplies
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Matched propagation delays