IXDI430CI

IXDI430CI概述

IC DRVR MOSF/IGBT 30A TO220-5

General Description

The IXDN430/IXDI430/IXDD430/IXDS430 are high speed high current gate drivers specifically designed to drive MOSFETs and IGBTs to their minimum switching time and maximum practical frequency limits. The IXD_430 can source and sink 30A of peak current while producing voltage rise and fall times of less than 30ns. The input of the drivers are compatible with TTL or CMOS and are fully immune to latch up over the entire operating range. Designed with small internal delays, cross conduction/current shoot-through is virtually eliminated in all configurations. Their features and wide safety margin in operating voltage and power make the drivers unmatched in

performance and value.

Features

• Built using the advantages and compatibility of CMOS and IXYS HDMOS™ processes

• Latch-Up Protected

• High Peak Output Current: 30A Peak

• Wide Operating Range: 8.5V to 35V

• Under Voltage Lockout Protection

• Ability to Disable Output under Faults

• High Capacitive Load

   Drive Capability: 5600 pF in <25ns

• Matched Rise And Fall Times

• Low Propagation Delay Time

• Low Output Impedance

• Low Supply Current

IXDI430CI中文资料参数规格
技术参数

上升/下降时间 18ns, 16ns

电源电压 8.5V ~ 35V

封装参数

安装方式 Through Hole

封装 TO-220-5

外形尺寸

封装 TO-220-5

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Obsolete

包装方式 Box

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买IXDI430CI
型号: IXDI430CI
制造商: IXYS Semiconductor
描述:IC DRVR MOSF/IGBT 30A TO220-5
替代型号IXDI430CI
型号/品牌 代替类型 替代型号对比

IXDI430CI

IXYS Semiconductor

当前型号

当前型号

IXDD430MCI

IXYS Semiconductor

完全替代

IXDI430CI和IXDD430MCI的区别

IXDN430CI

IXYS Semiconductor

完全替代

IXDI430CI和IXDN430CI的区别

IXDN430MCI

IXYS Semiconductor

完全替代

IXDI430CI和IXDN430MCI的区别

锐单商城 - 一站式电子元器件采购平台