IXDN402SI

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IXDN402SI概述

MOSFET DRVR 2A 2Out Lo Side Non-Inv 8Pin SOIC

General Description

The IXDN402/IXDI402/IXDF402 consists of two 2 Amp CMOS high speed MOSFET drivers. Each output can source and sink 2A of peak current while producing voltage rise and fall times of less than 15ns to drive the latest IXYS MOSFETs & IGBTs. The input of the driver is TTL or CMOS

compatible and is fully immune to latch up over the entire operating range. A patent-pending circuit virtually eliminates cross conduction and current shoot-through. Improved speed and drive capabilities are further enhanced by very low and matched rise and fall times.

Features

• Built using the advantages and compatibility of CMOS and IXYS HDMOS™ processes

• Latch-Up Protected Over Entire Operating Range

• High Peak Output Current: 2A Peak

• Wide Operating Range: 4.5V to 25V

• High Capacitive Load Drive Capability: 1000pF in <10ns

• Matched Rise And Fall Times

• Low Propagation Delay Time

• Low Output Impedance

• Low Supply Current

• Two Drivers in Single Chip

IXDN402SI中文资料参数规格
技术参数

上升/下降时间 8 ns

输出接口数 2

输出电流 2 A

上升时间 10 ns

下降时间 9 ns

工作温度Max 125 ℃

工作温度Min 55 ℃

电源电压 4.5V ~ 35V

电源电压Min 4.5 V

封装参数

安装方式 Surface Mount

封装 SOIC-8

外形尺寸

封装 SOIC-8

物理参数

工作温度 -55℃ ~ 150℃ TJ

其他

产品生命周期 Obsolete

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

海关信息

ECCN代码 EAR99

数据手册

在线购买IXDN402SI
型号: IXDN402SI
制造商: IXYS Semiconductor
描述:MOSFET DRVR 2A 2Out Lo Side Non-Inv 8Pin SOIC
替代型号IXDN402SI
型号/品牌 代替类型 替代型号对比

IXDN402SI

IXYS Semiconductor

当前型号

当前型号

IXDN602SIATR

IXYS Semiconductor

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IXDN402SI和IXDN602SIATR的区别

IXDN604SI

IXYS Semiconductor

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IXDN402SI和IXDN604SI的区别

IXDN604SIA

IXYS Semiconductor

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IXDN402SI和IXDN604SIA的区别

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