IXYS SEMICONDUCTOR IXFA10N80P 功率场效应管, MOSFET, 极性FET, N沟道, 10 A, 800 V, 1.1 ohm, 10 V, 5.5 V
The is a PolarHV™ HiPerFET N-channel enhancement-mode Power MOSFET features avalanche rated and fast intrinsic diode.
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- International standard package
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- Unclamped inductive switching UIS rated
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- Easy to drive and to protect
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- Easy to mount
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- Space savings
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- High power density
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- Low package inductance
通道数 1
针脚数 3
漏源极电阻 1.1 Ω
极性 N-Channel
耗散功率 300 W
阈值电压 5.5 V
漏源极电压Vds 800 V
漏源击穿电压 800 V
上升时间 22 ns
输入电容Ciss 2050pF @25VVds
下降时间 22 ns
工作温度Max 150 ℃
工作温度Min 55 ℃
耗散功率Max 300W Tc
安装方式 Surface Mount
引脚数 3
封装 TO-263-3
封装 TO-263-3
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Tube
制造应用 Power Management, Industrial
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IXFA10N80P IXYS Semiconductor | 当前型号 | 当前型号 |
IXFH10N80P IXYS Semiconductor | 完全替代 | IXFA10N80P和IXFH10N80P的区别 |
IXFP10N80P IXYS Semiconductor | 功能相似 | IXFA10N80P和IXFP10N80P的区别 |
IXFT9N80Q IXYS Semiconductor | 功能相似 | IXFA10N80P和IXFT9N80Q的区别 |