IXYS SEMICONDUCTOR IXFN200N07 晶体管, MOSFET, HiPerFET, N沟道, 200 A, 70 V, 6 mohm, 10 V, 4 V
The is a single N-channel enhancement-mode Power MOSFET with fast intrinsic diode HiPerFET™. It features low static ON-resistance HDMOS™ process and high power density. It is suitable for DC-to-DC converters, synchronous rectification, battery chargers, DC choppers, switch-mode and resonant-mode power supplies.
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- International standard packages
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- MiniBLOC with aluminium nitride isolation
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- Rugged polysilicon gate cell structure
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- Unclamped inductive switching UIS rating
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- Low package inductance
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- Easy to mount
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- Space saving
额定电压DC 70.0 V
额定电流 200 A
额定功率 520 W
通道数 1
针脚数 3
漏源极电阻 0.006 Ω
极性 N-Channel
耗散功率 520 W
阈值电压 4 V
漏源极电压Vds 70 V
漏源击穿电压 70 V
连续漏极电流Ids 200 A
上升时间 60 ns
隔离电压 2.50 kV
输入电容Ciss 9000pF @25VVds
额定功率Max 520 W
下降时间 60 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 520W Tc
安装方式 Surface Mount
引脚数 3
封装 SOT-227-4
长度 38.23 mm
宽度 25.42 mm
高度 9.6 mm
封装 SOT-227-4
材质 Silicon
重量 44.0 g
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Not Recommended for New Designs
包装方式 Tube
制造应用 Lighting, 照明, Power Management, 电源管理
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IXFN200N07 IXYS Semiconductor | 当前型号 | 当前型号 |
IXFN180N07 IXYS Semiconductor | 类似代替 | IXFN200N07和IXFN180N07的区别 |
IXFN340N06 IXYS Semiconductor | 功能相似 | IXFN200N07和IXFN340N06的区别 |
STE180N05 意法半导体 | 功能相似 | IXFN200N07和STE180N05的区别 |