IXYS SEMICONDUCTOR IXFH75N10 晶体管, MOSFET, N沟道, 75 A, 100 V, 20 mohm, 10 V, 4 V
通孔 N 通道 75A(Tc) 300W(Tc) TO-247AD(IXFH)
得捷:
MOSFET N-CH 100V 75A TO247AD
e络盟:
晶体管, MOSFET, N沟道, 75 A, 100 V, 0.02 ohm, 10 V, 4 V
艾睿:
Compared to traditional transistors, IXFH75N10 power MOSFETs, developed by Ixys Corporation, are able to both quickly switch between data lines as well as amplify the signals themselves. Its maximum power dissipation is 300000 mW. This MOSFET transistor has a minimum operating temperature of -55 °C and a maximum of 150 °C. This device is made with hiperfet technology. This N channel MOSFET transistor operates in enhancement mode.
Verical:
Trans MOSFET N-CH Si 100V 75A 3-Pin3+Tab TO-247AD
Newark:
# IXYS SEMICONDUCTOR IXFH75N10 MOSFET Transistor, N Channel, 75 A, 100 V, 20 mohm, 10 V, 4 V
Win Source:
MOSFET N-CH 100V 75A TO-247AD
额定电压DC 100 V
额定电流 75.0 A
针脚数 3
漏源极电阻 0.02 Ω
极性 N-Channel
耗散功率 300 W
阈值电压 4 V
输入电容 4.50 nF
栅电荷 260 nC
漏源极电压Vds 100 V
连续漏极电流Ids 75.0 A
上升时间 60 ns
输入电容Ciss 4500pF @25VVds
额定功率Max 300 W
下降时间 60 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 300W Tc
安装方式 Through Hole
引脚数 3
封装 TO-247-3
封装 TO-247-3
材质 Silicon
工作温度 -55℃ ~ 150℃ TJ
产品生命周期 Active
包装方式 Bulk
制造应用 Power Management, 电源管理
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2015/06/15
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
IXFH75N10 IXYS Semiconductor | 当前型号 | 当前型号 |
HUF75652G3 飞兆/仙童 | 功能相似 | IXFH75N10和HUF75652G3的区别 |
STW120NF10 意法半导体 | 功能相似 | IXFH75N10和STW120NF10的区别 |
IRFP150PBF 威世 | 功能相似 | IXFH75N10和IRFP150PBF的区别 |