VISHAY IRFR9014PBF 场效应管, MOSFET, P沟道, -60V, 5.1A, D-PAK
The is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The DPAK is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Power dissipation levels up to 1.5W are possible in typical surface-mount applications.
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- Dynamic dV/dt rating
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- Repetitive avalanche rated
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- Surface-mount
额定电压DC -60.0 V
额定电流 -5.10 A
额定功率 25 W
针脚数 3
漏源极电阻 0.5 Ω
极性 P-Channel
耗散功率 25 W
漏源极电压Vds 60 V
漏源击穿电压 -60.0 V
连续漏极电流Ids -5.10 A
上升时间 63.0 ns
输入电容Ciss 270pF @25VVds
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2.5 W
安装方式 Surface Mount
引脚数 3
封装 TO-252
长度 6.73 mm
宽度 6.22 mm
高度 2.38 mm
封装 TO-252
工作温度 -55℃ ~ 150℃
包装方式 Tube
制造应用 Power Management, Industrial
RoHS标准 RoHS Compliant
含铅标准 Lead Free
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IRFR9014PBF Vishay Semiconductor 威世 | 当前型号 | 当前型号 |
IRFR9024NPBF 英飞凌 | 功能相似 | IRFR9014PBF和IRFR9024NPBF的区别 |