VISHAY IRFRC20PBF 功率场效应管, MOSFET, N沟道, 2 A, 600 V, 4.4 ohm, 10 V, 4 V
The is a 600V N-channel Power MOSFET designed for fast switching, rugged device design and low on-resistance. The DPAK is designed for surface mounting using vapour phase, infrared or wave soldering techniques. The straight lead version IRFU, SiHFU series is for through-hole mounting applications. Power dissipation levels up to 1.5W are possible in typical surface mount applications.
额定功率 42 W
针脚数 3
漏源极电阻 4.4 Ω
极性 N-Channel
耗散功率 42 W
阈值电压 4 V
漏源极电压Vds 600 V
连续漏极电流Ids 2.00 A
上升时间 23 ns
输入电容Ciss 350pF @25VVds
下降时间 25 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2500 mW
安装方式 Surface Mount
引脚数 3
封装 TO-252
高度 2.39 mm
封装 TO-252
工作温度 -55℃ ~ 150℃
包装方式 Tube
制造应用 电源管理, Power Management
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
IRFRC20PBF Vishay Semiconductor 威世 | 当前型号 | 当前型号 |
IRFRC20TRPBF 威世 | 类似代替 | IRFRC20PBF和IRFRC20TRPBF的区别 |