IRFD210PBF

VISHAY  IRFD210PBF.  晶体管, MOSFET, N沟道, 600 mA, 200 V, 1.5 ohm, 10 V, 4 V

The is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is a machine-insertable case style which can be stacked in multiple combinations on standard 0.1-inch pin centres. The dual drain serves as a thermal link to the mounting surface for power dissipation levels up to 1W.

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Dynamic dV/dt rating

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For automatic insertion

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End stackable

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Repetitive avalanche rated

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Ease of paralleling

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Simple drive requirements