VISHAY IRFR9110PBF. 晶体管, MOSFET, P沟道, 3.1 A, -100 V, 1.2 ohm, -10 V, -4 V
The is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The DPAK is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Power dissipation levels up to 1.5W are possible in typical surface-mount applications.
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- Dynamic dV/dt rating
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- Repetitive avalanche rated
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- Surface-mount
额定电压DC -100 V
额定电流 -3.10 A
针脚数 3
漏源极电阻 1.2 Ω
极性 P-Channel
耗散功率 25 W
漏源极电压Vds 100 V
漏源击穿电压 -100 V
连续漏极电流Ids -3.10 A
上升时间 27 ns
输入电容Ciss 200pF @25VVds
下降时间 17 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2.5 W
安装方式 Surface Mount
引脚数 3
封装 TO-252
长度 6.73 mm
宽度 6.22 mm
高度 2.39 mm
封装 TO-252
工作温度 -55℃ ~ 150℃
包装方式 Tube
制造应用 Industrial, Power Management
RoHS标准 RoHS Compliant
含铅标准 Lead Free
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IRFR9110PBF Vishay Semiconductor 威世 | 当前型号 | 当前型号 |
IRFR9110TRPBF 威世 | 类似代替 | IRFR9110PBF和IRFR9110TRPBF的区别 |
IRFR9120NPBF 英飞凌 | 功能相似 | IRFR9110PBF和IRFR9120NPBF的区别 |