VISHAY IRFD9010PBF 场效应管, MOSFET, P沟道, HEXDIP
DESCRIPTION
The HVMDIP technology is the key to Vishay’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HVMDIP design achieves very low on-state resistance combined with high transconductance and extreme device ruggedness.
FEATURES
• For Automatic Insertion
• Compact, End Stackable
•Fast Switching
• Low Drive Current
• Easy Paralleled
• Excellent Temperature Stability
• P-Channel Versatility
• Compliant to RoHS Directive 2002/95/EC
额定电压DC -50.0 V
额定电流 -1.10 A
针脚数 4
漏源极电阻 0.35 Ω
极性 P-Channel
耗散功率 1 W
漏源极电压Vds 60 V
漏源击穿电压 -50.0 V
连续漏极电流Ids -1.10 A
上升时间 47 ns
下降时间 39 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
安装方式 Through Hole
引脚数 4
封装 DIP-4
长度 6.9 mm
宽度 3.8 mm
高度 3.8 mm
封装 DIP-4
工作温度 -55℃ ~ 150℃
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free