VISHAY IRF9510PBF 晶体管, MOSFET, P沟道, 3 A, -100 V, 1.2 ohm, -10 V, -4 V
The is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is universally preferred for power dissipation levels to approximately 50W. The low thermal resistance of the package contributes to its wide acceptance throughout the industry.
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- Dynamic dV/dt rating
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- Repetitive avalanche rated
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- -55 to 175°C Operating temperature range
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- Ease of paralleling
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- Simple drive requirements
额定电压DC -100 V
额定电流 -4.00 A
额定功率 43 W
针脚数 3
漏源极电阻 1.2 Ω
极性 P-Channel
耗散功率 20 W
漏源极电压Vds 100 V
漏源击穿电压 -100 V
连续漏极电流Ids -4.00 A
上升时间 27.0 ns
输入电容Ciss 200pF @25VVds
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 43 W
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.41 mm
宽度 4.7 mm
高度 15.49 mm
封装 TO-220-3
工作温度 -55℃ ~ 175℃
包装方式 Tube
制造应用 Power Management, Industrial
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC