VISHAY IRFZ14PBF 晶体管, MOSFET, N沟道, 10 A, 60 V, 200 mohm, 10 V, 4 V
The is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is universally preferred for power dissipation levels to approximately 50W. The low thermal resistance of the package contributes to its wide acceptance throughout the industry.
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- Dynamic dV/dt rating
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- -55 to 175°C Operating temperature range
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- Ease of paralleling
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- Simple drive requirements
额定电压DC 60.0 V
额定电流 10.0 A
针脚数 3
漏源极电阻 0.2 Ω
极性 N-Channel
耗散功率 36 W
阈值电压 4 V
输入电容 300pF @25V
漏源极电压Vds 60 V
漏源击穿电压 60 V
连续漏极电流Ids 10.0 A
上升时间 50 ns
输入电容Ciss 300pF @25VVds
下降时间 19 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 43 W
安装方式 Through Hole
引脚数 3
封装 TO-220
长度 10.51 mm
宽度 4.7 mm
高度 15.49 mm
封装 TO-220
工作温度 -55℃ ~ 175℃
包装方式 Tube
制造应用 Industrial, Commercial, Power Management
RoHS标准 RoHS Compliant
含铅标准 Lead Free
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IRFZ14PBF Vishay Semiconductor 威世 | 当前型号 | 当前型号 |
FQP13N10 飞兆/仙童 | 功能相似 | IRFZ14PBF和FQP13N10的区别 |