VISHAY IRFL9110PBF 晶体管, MOSFET, P沟道, -1.1 A, -100 V, 1.2 ohm, -10 V, -4 V
The is a -100V P-channel Power MOSFET designed for fast switching, rugged device design and low on-resistance. The SOT-223 package is designed for surface-mount using vapour phase, infra-red or wave soldering techniques. Its unique package design allows for easy automatic pick-and place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heat sinking. Power dissipation of greater than 1.25W is possible in a typical surface mount application.
额定功率 3.1 W
针脚数 4
漏源极电阻 1.2 Ω
极性 P-Channel
耗散功率 3.1 W
漏源极电压Vds 100 V
连续漏极电流Ids -1.10 A
上升时间 27 ns
输入电容Ciss 200pF @25VVds
下降时间 17 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2 W
安装方式 Surface Mount
引脚数 4
封装 SOT-223
长度 6.7 mm
宽度 3.7 mm
高度 1.8 mm
封装 SOT-223
工作温度 -55℃ ~ 150℃
包装方式 Tube
制造应用 电源管理, Power Management, Industrial
RoHS标准 RoHS Compliant
含铅标准 Lead Free