VISHAY IRF9Z34PBF 场效应管, MOSFET, P沟道
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• P-Channel
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead Pb-free Available
针脚数 3
漏源极电阻 0.14 Ω
极性 P-Channel
耗散功率 88 W
漏源极电压Vds 60 V
连续漏极电流Ids -18.0 A
输入电容Ciss 1100pF @25VVds
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 88000 mW
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.41 mm
宽度 4.7 mm
高度 15.49 mm
封装 TO-220-3
工作温度 -55℃ ~ 175℃
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
IRF9Z34PBF Vishay Semiconductor 威世 | 当前型号 | 当前型号 |
IRF9Z34NPBF 英飞凌 | 功能相似 | IRF9Z34PBF和IRF9Z34NPBF的区别 |
SPP18P06PHXKSA1 英飞凌 | 功能相似 | IRF9Z34PBF和SPP18P06PHXKSA1的区别 |