IRF510SPBF

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IRF510SPBF概述

VISHAY  IRF510SPBF  晶体管, MOSFET, N沟道, 5.6 A, 100 V, 540 mohm, 10 V, 4 V

The is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The D2PAK is a surface-mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability in any existing surface-mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.

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Dynamic dV/dt rating
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Repetitive avalanche rated
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-55 to 175°C Operating temperature range
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Ease of paralleling
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Surface-mount
IRF510SPBF中文资料参数规格
技术参数

针脚数 3

漏源极电阻 0.54 Ω

极性 N-Channel

耗散功率 43 W

阈值电压 4 V

漏源极电压Vds 100 V

连续漏极电流Ids 5.60 A

输入电容Ciss 180pF @25VVds

工作温度Max 175 ℃

工作温度Min -55 ℃

耗散功率Max 3.7 W

封装参数

安装方式 Surface Mount

引脚数 3

封装 TO-263

外形尺寸

高度 4.83 mm

封装 TO-263

其他

包装方式 Tube

制造应用 Industrial, Power Management

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买IRF510SPBF
型号: IRF510SPBF
描述:VISHAY  IRF510SPBF  晶体管, MOSFET, N沟道, 5.6 A, 100 V, 540 mohm, 10 V, 4 V

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