VISHAY IRF820PBF. 场效应管, MOSFET, N沟道
The is a 500V N-channel Power MOSFET, third generation power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
- .
- Dynamic dV/dt rating
- .
- Repetitive avalanche rated
- .
- 150°C Operating temperature
- .
- Easy to parallel
- .
- Simple drive requirement
额定电压DC 500 V
额定电流 2.50 A
额定功率 50 W
针脚数 3
漏源极电阻 3 Ω
极性 N-Channel
耗散功率 40 W
阈值电压 4 V
输入电容 360pF @25V
漏源极电压Vds 500 V
漏源击穿电压 500 V
连续漏极电流Ids 2.50 A
上升时间 8.60 ns
输入电容Ciss 360pF @25VVds
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 50 W
安装方式 Through Hole
引脚数 3
封装 TO-220
长度 10.41 mm
宽度 4.7 mm
高度 9.01 mm
封装 TO-220
工作温度 -55℃ ~ 150℃
包装方式 Tube
制造应用 电源管理, Power Management
RoHS标准 RoHS Compliant
含铅标准 Lead Free
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IRF820PBF Vishay Semiconductor 威世 | 当前型号 | 当前型号 |
NTE2398 NTE Electronics | 功能相似 | IRF820PBF和NTE2398的区别 |