VISHAY IRLZ24PBF 晶体管, MOSFET, N沟道, 17 A, 60 V, 100 mohm, 5 V, 2 V
The is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is universally preferred for power dissipation levels to approximately 50W. The low thermal resistance of the package contributes to its wide acceptance throughout the industry.
针脚数 3
漏源极电阻 0.1 Ω
极性 N-Channel
耗散功率 60 W
阈值电压 2 V
输入电容 870pF @25V
漏源极电压Vds 60 V
连续漏极电流Ids 17.0 A
上升时间 110 ns
输入电容Ciss 870pF @25VVds
下降时间 41 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 60000 mW
安装方式 Through Hole
引脚数 3
封装 TO-220
长度 10.51 mm
宽度 4.7 mm
高度 15.49 mm
封装 TO-220
工作温度 -55℃ ~ 175℃
包装方式 Tube
制造应用 Industrial, Power Management
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC