IRF9Z24PBF

VISHAY  IRF9Z24PBF.  晶体管, MOSFET, P沟道, 9.7 A, -60 V, 280 mohm, -10 V, -4 V

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry.

FEATURES

• Dynamic dV/dt Rating

• Repetitive Avalanche Rated

• P-Channel

• 175 °C Operating Temperature

• Fast Switching

• Ease of Paralleling

• Simple Drive Requirements

• Lead Pb-free Available