IRF9530SPBF

IRF9530SPBF图片1
IRF9530SPBF图片2
IRF9530SPBF图片3
IRF9530SPBF图片4
IRF9530SPBF图片5
IRF9530SPBF图片6
IRF9530SPBF图片7
IRF9530SPBF图片8
IRF9530SPBF概述

VISHAY  IRF9530SPBF  晶体管, MOSFET, P沟道, 12 A, -100 V, 300 mohm, -10 V, 4 V

The is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The D2PAK is a surface-mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability in any existing surface-mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.

.
Dynamic dV/dt rating
.
Repetitive avalanche rated
.
-55 to 175°C Operating temperature range
.
Surface-mount
.
Halogen-free
IRF9530SPBF中文资料参数规格
技术参数

针脚数 3

漏源极电阻 0.3 Ω

极性 P-Channel

耗散功率 88 W

阈值电压 4 V

漏源极电压Vds 100 V

连续漏极电流Ids -12.0 A

上升时间 52 ns

输入电容Ciss 860pF @25VVds

下降时间 39 ns

工作温度Max 175 ℃

工作温度Min -55 ℃

耗散功率Max 3700 mW

封装参数

安装方式 Surface Mount

引脚数 3

封装 TO-263

外形尺寸

长度 10.67 mm

宽度 9.02 mm

高度 4.83 mm

封装 TO-263

物理参数

工作温度 -55℃ ~ 175℃

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买IRF9530SPBF
型号: IRF9530SPBF
描述:VISHAY  IRF9530SPBF  晶体管, MOSFET, P沟道, 12 A, -100 V, 300 mohm, -10 V, 4 V

锐单商城 - 一站式电子元器件采购平台