VISHAY IRF9530SPBF 晶体管, MOSFET, P沟道, 12 A, -100 V, 300 mohm, -10 V, 4 V
The is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The D2PAK is a surface-mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability in any existing surface-mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
针脚数 3
漏源极电阻 0.3 Ω
极性 P-Channel
耗散功率 88 W
阈值电压 4 V
漏源极电压Vds 100 V
连续漏极电流Ids -12.0 A
上升时间 52 ns
输入电容Ciss 860pF @25VVds
下降时间 39 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 3700 mW
安装方式 Surface Mount
引脚数 3
封装 TO-263
长度 10.67 mm
宽度 9.02 mm
高度 4.83 mm
封装 TO-263
工作温度 -55℃ ~ 175℃
RoHS标准 RoHS Compliant
含铅标准 Lead Free