VISHAY IRFU9120PBF. 晶体管, MOSFET, P沟道, 5.6 A, -100 V, 600 mohm, -10 V, -4 V
The is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The straight lead version is for through-hole mounting applications. Power dissipation levels up to 1.5W are possible in typical surface-mount applications.
额定电压DC -100 V
额定电流 -5.60 A
针脚数 3
漏源极电阻 0.6 Ω
极性 P-Channel
耗散功率 42 W
漏源极电压Vds -100 V
连续漏极电流Ids -5.60 A
上升时间 29 ns
下降时间 25 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
安装方式 Through Hole
引脚数 3
封装 TO-251
长度 6.73 mm
高度 6.22 mm
脚长度 9.65 mm
封装 TO-251
工作温度 -55℃ ~ 150℃
包装方式 Tube
制造应用 Industrial, Power Management
RoHS标准 RoHS Compliant
含铅标准 Lead Free