IRFP350LCPBF

VISHAY  IRFP350LCPBF  晶体管, MOSFET, N沟道, 16 A, 400 V, 300 mohm, 10 V, 4 V

The is a HEXFET® N-channel low charge Power MOSFET achieves significantly lower gate charge over conventional MOSFET. Utilizing advanced HEXFET® technology the device improvements allow for reduced gate drive requirements, faster switching speeds and increased total system savings. This device improvement combined with the proven ruggedness and reliability of HEXFET® is offer the designer a new standard in power transistors for switching applications.

.

Ultra-low gale charge

.

Reduced gate drive requirement

.

Enhanced 30V Vp rating

.

Reduced CISS, COSS and CRSS

.

Isolated central mounting hole

.

Dynamic dV/dt rating

.

Repetitive avalanche rating