VISHAY IRFP32N50KPBF. 晶体管, MOSFET, N沟道, 32 A, 500 V, 160 mohm, 10 V, 5 V
The is a 500V N-channel SMPS MOSFET with low gate charge Qg results in simple drive requirement. It operates at high frequency with hard switching application. Suitable for SMPS and high speed power switching and motor drive applications.
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- Enhanced dv/dt capabilities offer improved ruggedness
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- Improved gate, avalanche and dynamic dv/dt ruggedness
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- Fully characterized capacitance and avalanche voltage and current
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- Low RDS ON
额定电压DC 500 V
额定电流 32.0 A
额定功率 460 W
针脚数 3
漏源极电阻 0.16 Ω
极性 N-Channel
耗散功率 460 W
阈值电压 5 V
漏源极电压Vds 500 V
漏源击穿电压 500 V
连续漏极电流Ids 32.0 A
上升时间 120 ns
工作温度Max 150 ℃
安装方式 Through Hole
引脚数 3
封装 TO-247
封装 TO-247
包装方式 Tube
制造应用 电源管理, Power Management, 电机驱动与控制, Motor Drive & Control
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IRFP32N50KPBF VISHAY 威世 | 当前型号 | 当前型号 |
STW28NM50N 意法半导体 | 功能相似 | IRFP32N50KPBF和STW28NM50N的区别 |
STW20NM50FD 意法半导体 | 功能相似 | IRFP32N50KPBF和STW20NM50FD的区别 |
STW23NM50N 意法半导体 | 功能相似 | IRFP32N50KPBF和STW23NM50N的区别 |