N 通道 MOSFET，100V 至 150V，Vishay Semiconductor### MOSFET 晶体管，Vishay Semiconductor
The is a HEXFET® third generation N-channel Power MOSFET provide the designer with the best combination of fast switching, ruggedized device design and low ON-resistance. The package provides greater creepage distances between pins to meet the requirements of most safety specifications.
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- Dynamic dV/dt rating
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- Repetitive avalanche rating
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- Isolated central mounting hole
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- Fast switching
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- Ease of paralleling
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- Simple drive requirements
额定电压DC 100 V
额定电流 41.0 A
额定功率 180 W
针脚数 3
漏源极电阻 0.055 Ω
极性 N-Channel
耗散功率 230 W
阈值电压 2 V
输入电容 2800pF @25V
漏源极电压Vds 100 V
漏源击穿电压 100 V
连续漏极电流Ids 41.0 A
上升时间 120 ns
输入电容Ciss 2800pF @25VVds
下降时间 81 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 230 W
安装方式 Through Hole
引脚数 3
封装 TO-247
长度 15.87 mm
宽度 5.31 mm
高度 20.82 mm
封装 TO-247
工作温度 -55℃ ~ 175℃
包装方式 Tube
制造应用 Industrial, Commercial, Power Management
RoHS标准 RoHS Compliant
含铅标准 Lead Free
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IRFP150PBF VISHAY 威世 | 当前型号 | 当前型号 |
IRFP150NPBF 国际整流器 | 功能相似 | IRFP150PBF和IRFP150NPBF的区别 |
IXTH75N10 IXYS Semiconductor | 功能相似 | IRFP150PBF和IXTH75N10的区别 |
IXFH75N10 IXYS Semiconductor | 功能相似 | IRFP150PBF和IXFH75N10的区别 |