IRFP360LCPBF

VISHAY  IRFP360LCPBF  晶体管, MOSFET, N沟道, 23 A, 400 V, 200 mohm, 10 V, 4 V

The is a N-channel enhancement-mode Power MOSFET with ultra-low gate charge. This new low charge power device achieves significantly lower gate charge over conventional MOSFETs. Utilizing advanced MOSFETs technology the device improvements allow for faster switching speeds and increased total system savings. This device improvement combined with the proven ruggedness and reliability of MOSFETs offer the designer a new standard in power transistors.

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Reduced gate drive requirement

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30V VGS Enhanced rating

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Reduced CISS, COSS, CRSS

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Dynamic dV/dt rating

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Repetitive avalanche rated