VISHAY IRFPG50PBF 功率场效应管, MOSFET, N沟道, 6 A, 1 kV, 2 ohm, 10 V, 4 V
The is a 1000V N-channel enhancement-mode Power MOSFET with single configuration. This third generation Power MOSFET from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low ON-resistance. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.
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- Dynamic dV/dt rating
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- Repetitive avalanche rated
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- Fast switching
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- Ease of paralleling
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- Simple drive requirements
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- Isolated central mounting hole
额定电压DC 1.00 kV
额定电流 6.10 A
额定功率 190 W
针脚数 3
漏源极电阻 2 Ω
极性 N-Channel
耗散功率 180 W
阈值电压 4 V
输入电容 2800pF @25V
漏源极电压Vds 1 kV
漏源击穿电压 1000 V
连续漏极电流Ids 6.10 A
上升时间 35 ns
输入电容Ciss 2800pF @25VVds
下降时间 36 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 190 W
安装方式 Through Hole
引脚数 3
封装 TO-247-3
长度 15.87 mm
宽度 5.31 mm
高度 20.7 mm
封装 TO-247-3
工作温度 -55℃ ~ 150℃
包装方式 Tube
制造应用 Industrial, Power Management
RoHS标准 RoHS Compliant
含铅标准 Lead Free
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IRFPG50PBF Vishay Semiconductor 威世 | 当前型号 | 当前型号 |
IRFPG40PBF 威世 | 类似代替 | IRFPG50PBF和IRFPG40PBF的区别 |
IXFH6N100 IXYS Semiconductor | 功能相似 | IRFPG50PBF和IXFH6N100的区别 |
IXFH6N100F IXYS Semiconductor | 功能相似 | IRFPG50PBF和IXFH6N100F的区别 |