IRFIBC40GPBF

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IRFIBC40GPBF概述

VISHAY  IRFIBC40GPBF  场效应管, MOSFET, N沟道

DESCRIPTION

Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.

The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsinkusing a single clip or by a single screw fixing.

FEATURES

• Isolated Package

• Low Thermal Resistance

• Sink to Lead Creepage Dist. = 4.8 mm

• High Voltage Isolation = 2.5 kVRMSt = 60 s,f = 60 Hz

• Dynamic dV/dt Rating

• Lead Pb-free Available

IRFIBC40GPBF中文资料参数规格
技术参数

额定功率 40 W

针脚数 3

漏源极电阻 1.2 Ω

极性 N-Channel

耗散功率 40 W

阈值电压 4 V

漏源极电压Vds 600 V

连续漏极电流Ids 3.50 A

上升时间 18 ns

输入电容Ciss 1300pF @25VVds

下降时间 20 ns

工作温度Max 150 ℃

工作温度Min -55 ℃

耗散功率Max 40 W

封装参数

安装方式 Through Hole

引脚数 3

封装 TO-220-3

外形尺寸

长度 10.41 mm

宽度 4.7 mm

高度 9.8 mm

封装 TO-220-3

物理参数

工作温度 -55℃ ~ 150℃

其他

包装方式 Tube

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

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型号: IRFIBC40GPBF
描述:VISHAY  IRFIBC40GPBF  场效应管, MOSFET, N沟道

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