VISHAY IRFIBC40GPBF 场效应管, MOSFET, N沟道
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220 FULLPAK eliminates the need for additional insulating hardware in commercial-industrial applications. The molding compound used provides a high isolation capability and a low thermal resistance between the tab and external heatsink. This isolation is equivalent to using a 100 micron mica barrier with standard TO-220 product. The FULLPAK is mounted to a heatsinkusing a single clip or by a single screw fixing.
FEATURES
• Isolated Package
• Low Thermal Resistance
• Sink to Lead Creepage Dist. = 4.8 mm
• High Voltage Isolation = 2.5 kVRMSt = 60 s,f = 60 Hz
• Dynamic dV/dt Rating
• Lead Pb-free Available
额定功率 40 W
针脚数 3
漏源极电阻 1.2 Ω
极性 N-Channel
耗散功率 40 W
阈值电压 4 V
漏源极电压Vds 600 V
连续漏极电流Ids 3.50 A
上升时间 18 ns
输入电容Ciss 1300pF @25VVds
下降时间 20 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 40 W
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.41 mm
宽度 4.7 mm
高度 9.8 mm
封装 TO-220-3
工作温度 -55℃ ~ 150℃
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free