功率MOSFET Power MOSFET
Power MOSFET
FEATURES
• Superfast Body Diode Eliminates the Need for External Diodes in ZVS Applications
• Lower Gate Charge Results in Simple Drive Requirements
• Enhanced dV/dt Capabilities Offer Improved Ruggedness
• Higher Gate Voltage Threshold Offers Improved Noise Immunity
• Lead Pb-free Available Available
APPLICATIONS
• Zero Voltage Switching SMPS
• Telecom and Server Power Supplies
• Uniterruptible Power Supplies
• Motor Control Applications
漏源极电阻 0.32 Ω
极性 N-Channel
耗散功率 330 W
阈值电压 5 V
漏源极电压Vds 600 V
连续漏极电流Ids 21.0 A
上升时间 58 ns
输入电容Ciss 4000pF @25VVds
下降时间 10 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 330000 mW
安装方式 Through Hole
引脚数 3
封装 TO-247-3
长度 15.87 mm
宽度 5.31 mm
高度 20.82 mm
封装 TO-247-3
工作温度 -55℃ ~ 150℃
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free