N 通道 MOSFET,600V 至 1000V,Vishay Semiconductor ### MOSFET 晶体管,Vishay Semiconductor
Power MOSFET
DESCRIPTION
This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional Power MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total
system savings. In addition reduced switching losses and improved efficiency are achievable in a variety of high frequency applications. Frequencies of a few MHz at high current are possible using the new low charge Power MOSFETs.
These device improvements combined with the proven ruggedness and reliability that are characteristic of Power MOSFETs offer the designer a new standard in power transistors for switching applications.
FEATURES
• Ultra Low Gate Charge
• Reduced Gate Drive Requirement
• Enhanced 30 V, VGS Rating
• Reduced Ciss, Coss, Crss
• Extremely High Frequency Operation
• Repetitive Avalanche Rated
• Lead Pb-free Available
额定电压DC 600 V
额定电流 6.20 A
漏源极电阻 1.2 Ω
极性 N-Channel
耗散功率 125 W
输入电容 1100pF @25V
漏源极电压Vds 600 V
漏源击穿电压 600 V
连续漏极电流Ids 6.20 A
上升时间 20 ns
输入电容Ciss 1100pF @25VVds
下降时间 17 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 125 W
安装方式 Through Hole
引脚数 3
封装 TO-220
长度 10.41 mm
宽度 4.7 mm
高度 9.01 mm
封装 TO-220
工作温度 -55℃ ~ 150℃
RoHS标准 RoHS Compliant
含铅标准 Lead Free