VISHAY IRFP340PBF 晶体管, MOSFET, N沟道, 11 A, 400 V, 550 mohm, 10 V, 4 V
The is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package provides greater creepage distances between pins to meet the requirements of most safety specifications.
额定电压DC 400 V
额定电流 11.0 A
针脚数 3
漏源极电阻 0.55 Ω
极性 N-Channel
耗散功率 150 W
阈值电压 4 V
输入电容 1400pF @25V
漏源极电压Vds 400 V
漏源击穿电压 400 V
连续漏极电流Ids 11.0 A
上升时间 27 ns
下降时间 24 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
安装方式 Through Hole
引脚数 3
封装 TO-247-3
长度 15.87 mm
宽度 5.31 mm
高度 20.82 mm
封装 TO-247-3
工作温度 -55℃ ~ 150℃
包装方式 Tube
制造应用 Power Management, Industrial, Commercial
RoHS标准 RoHS Compliant
含铅标准 Lead Free