IRFPC60PBF概述
VISHAY IRFPC60PBF 场效应管, MOSFET, N沟道
The is a 600V N-channel enhancement-mode Power MOSFET with single configuration. This third generation Power MOSFET from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low ON-resistance. It also provides greater creepage distance between pins to meet the requirements of most safety specifications.
- .
- Dynamic dV/dt rating
- .
- Repetitive avalanche rated
- .
- Fast switching
- .
- Ease of paralleling
- .
- Simple drive requirements
- .
- Isolated central mounting hole
IRFPC60PBF中文资料参数规格
技术参数
额定电压DC 600 V
额定电流 16.0 A
额定功率 280 W
针脚数 3
漏源极电阻 0.4 Ω
极性 N-Channel
耗散功率 280 W
阈值电压 4 V
输入电容 3900pF @25V
漏源极电压Vds 600 V
漏源击穿电压 600 V
连续漏极电流Ids 16.0 A
上升时间 54.0 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
封装参数
安装方式 Through Hole
引脚数 3
封装 TO-247
外形尺寸
长度 15.87 mm
高度 20.82 mm
封装 TO-247
物理参数
工作温度 -55℃ ~ 150℃
其他
包装方式 Tube
制造应用 Power Management, Industrial
符合标准
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
在线购买IRFPC60PBF