




Trans MOSFET N-CH 100V 7.7A 3Pin2+Tab DPAK T/R
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Surface Mount IRLR120/SiHLR120
• Straight Lead IRLU120/SiHLU120
• Available in Tape and Reel
• Logic-Level Gate Drive
•RDSonSpecified at VGS= 4 V and 5 V
• Lead Pb-free Available
艾睿:
Trans MOSFET N-CH 100V 7.7A 3-Pin2+Tab DPAK T/R
富昌:
单 N 沟道 100 V 0.27 Ohms 表面贴装 功率 Mosfet - TO-252
Verical:
Trans MOSFET N-CH 100V 7.7A 3-Pin2+Tab DPAK T/R
Newark:
# VISHAY IRLR120TRPBF MOSFET Transistor, N Channel, 7.7 A, 100 V, 270 mohm, 5 V, 2 V
漏源极电阻 0.27 Ω
极性 N-Channel
耗散功率 2.5 W
阈值电压 2 V
漏源极电压Vds 100 V
连续漏极电流Ids 7.70 A
上升时间 64 ns
输入电容Ciss 490pF @25VVds
下降时间 27 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2500 mW
安装方式 Surface Mount
引脚数 3
封装 DPAK-252
高度 2.39 mm
封装 DPAK-252
工作温度 -55℃ ~ 150℃
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free