VISHAY IRF9640PBF 晶体管, MOSFET, P沟道, 11 A, -200 V, 500 mohm, -10 V, -4 V
The is a -200V P-channel Power MOSFET, third generation HEXFET® power MOSFET provides the designer with the best combination of fast switching, ruggedized device design and low on-resistance. The package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50W.
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- Dynamic dV/dt rating
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- Repetitive avalanche rated
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- 175°C Operating temperature
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- Easy to parallel
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- Simple drive requirement
额定电压DC -200 V
额定电流 -11.0 A
额定功率 125 W
针脚数 3
漏源极电阻 0.5 Ω
极性 P-Channel
耗散功率 125 W
漏源极电压Vds 200 V
漏源击穿电压 -200 V
连续漏极电流Ids -11.0 A
上升时间 43 ns
输入电容Ciss 1200pF @25VVds
下降时间 38 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 125 W
安装方式 Through Hole
引脚数 3
封装 TO-220
长度 10.51 mm
宽度 4.7 mm
高度 15.49 mm
封装 TO-220
工作温度 -55℃ ~ 150℃
包装方式 Tube
制造应用 电源管理, Power Management
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC