MOSFET 晶体管,Vishay Semiconductor
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry.
FEATURES
• Dynamic dV/dt Rating
• 175 °C Operating Temperature
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Compliant to RoHS Directive 2002/95/EC
针脚数 3
漏源极电阻 0.1 Ω
极性 N-Channel
耗散功率 60 W
阈值电压 4 V
漏源极电压Vds 55 V
连续漏极电流Ids 17.0 A
上升时间 58 ns
输入电容Ciss 640pF @25VVds
下降时间 42 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 60 W
安装方式 Through Hole
引脚数 3
封装 TO-220-3
长度 10.41 mm
宽度 4.7 mm
高度 15.49 mm
封装 TO-220-3
工作温度 -55℃ ~ 175℃
包装方式 Tube
RoHS标准 RoHS Compliant
含铅标准 Lead Free