VISHAY IRL510PBF. 晶体管, MOSFET, N沟道, 5.6 A, 100 V, 540 mohm, 5 V, 2 V
The is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is universally preferred for power dissipation levels to approximately 50W. The low thermal resistance of the package contributes to its wide acceptance throughout the industry.
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- Dynamic dV/dt rating
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- -55 to 175°C Operating temperature range
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- Repetitive avalanche rated
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- Logic-level gate drive
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- Ease of paralleling
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- RDS ON Specified at VGS = 4 and 5V
额定电压DC 100 V
额定电流 5.60 A
针脚数 3
漏源极电阻 0.54 Ω
极性 N-Channel
耗散功率 43 W
阈值电压 2 V
输入电容 250pF @25V
漏源极电压Vds 100 V
漏源击穿电压 100 V
连续漏极电流Ids 5.60 A
上升时间 47.0 ns
输入电容Ciss 250pF @25VVds
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 3.7 W
安装方式 Through Hole
引脚数 3
封装 TO-220
长度 10.41 mm
宽度 4.7 mm
高度 9.01 mm
封装 TO-220
工作温度 -55℃ ~ 175℃
包装方式 Tube
制造应用 Power Management, Industrial
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC