VISHAY IRF9620PBF 晶体管, MOSFET, P沟道, 3.5 A, -200 V, 1.5 ohm, -10 V, -4 V
The is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is universally preferred for power dissipation levels to approximately 50W. The low thermal resistance of the package contributes to its wide acceptance throughout the industry.
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- Dynamic dV/dt rating
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- Ease of paralleling
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- Simple drive requirements
额定电压DC -200 V
额定电流 -3.50 A
额定功率 20 W
针脚数 3
漏源极电阻 1.5 Ω
极性 P-Channel
耗散功率 40 W
漏源极电压Vds 200 V
漏源击穿电压 -200 V
连续漏极电流Ids -3.50 A
上升时间 25 ns
输入电容Ciss 350pF @25VVds
下降时间 15 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 40 W
安装方式 Through Hole
引脚数 3
封装 TO-220
长度 10.41 mm
宽度 4.7 mm
高度 9.01 mm
封装 TO-220
工作温度 -55℃ ~ 150℃
包装方式 Tube
制造应用 Power Management, Industrial
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC