IRFBC30APBF

VISHAY  IRFBC30APBF  功率场效应管, MOSFET, N沟道, 3.6 A, 600 V, 2.2 ohm, 10 V, 4.5 V

The is a 600V N-channel enhancement-mode Power MOSFET with single configuration. It is suitable for SMPS, uninterruptible power supply and high speed power switching applications.

.

Low gate charge Qg results in simple drive requirement

.

Improved gate, avalanche and dynamic dV/dt ruggedness

.

Fully characterized capacitance and avalanche voltage and current

.

Effective COSS specified