VISHAY IRF9540SPBF 场效应管, MOSFET, P沟道
The is a third generation P-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The D2PAK is a surface-mount power package capable of accommodating die size up to HEX-4. It provides the highest power capability in any existing surface-mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2W in a typical surface-mount application.
针脚数 3
漏源极电阻 0.2 Ω
极性 P-Channel
耗散功率 150 W
漏源极电压Vds -100 V
连续漏极电流Ids -19.0 A
上升时间 73 ns
输入电容Ciss 1400pF @25VVds
下降时间 57 ns
工作温度Max 175 ℃
工作温度Min -55 ℃
耗散功率Max 150000 mW
安装方式 Surface Mount
引脚数 3
封装 TO-263
长度 10.67 mm
宽度 9.65 mm
高度 4.83 mm
封装 TO-263
工作温度 -55℃ ~ 175℃
包装方式 Tube
制造应用 Power Management, Industrial
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC版本 2015/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
IRF9540SPBF Vishay Semiconductor 威世 | 当前型号 | 当前型号 |
IRF9540NSTRLPBF 英飞凌 | 功能相似 | IRF9540SPBF和IRF9540NSTRLPBF的区别 |
IRF9540NSPBF 英飞凌 | 功能相似 | IRF9540SPBF和IRF9540NSPBF的区别 |