功率MOSFET Power MOSFET
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
FEATURES
• Dynamic dV/dt Rating
• Repetitive Avalanche Rated
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead Pb-free Available
贸泽:
MOSFET N-Chan 800V 4.1 Amp
艾睿:
Trans MOSFET N-CH 800V 4.1A 3-Pin3+Tab TO-262
富昌:
单 N 沟道 800 V 3 Ohms 表面贴装 功率 Mosfet - TO-262
Newark:
# VISHAY IRFBE30LPBF Power MOSFET, N Channel, 4.1 A, 800 V, 3 ohm, 10 V, 4 V