N 通道 MOSFET,60V 至 90V,Vishay Semiconductor
DESCRIPTION
Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness.
The DPAK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version IRFU/SiHFU series is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications.
FEATURES
• Dynamic dV/dt Rating
• Surface Mount IRFR014/SiHFR014
• Straight Lead IRFU014/SiHFU014
• Available in Tape and Reel
• Fast Switching
• Ease of Paralleling
• Simple Drive Requirements
• Lead Pb-free Available
漏源极电阻 0.2 Ω
极性 N-Channel
耗散功率 25 W
阈值电压 4 V
漏源极电压Vds 60 V
连续漏极电流Ids 7.70 A
上升时间 50 ns
输入电容Ciss 300pF @25VVds
下降时间 19 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 25 W
安装方式 Surface Mount
引脚数 3
封装 DPAK-252
长度 6.73 mm
宽度 6.22 mm
高度 2.38 mm
封装 DPAK-252
工作温度 -55℃ ~ 150℃
包装方式 Tape & Reel TR
RoHS标准 RoHS Compliant
含铅标准 Lead Free