VISHAY IRFI640GPBF. 场效应管, MOSFET, N沟道
The is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The FULLPAK eliminates the need for additional insulating hardware. The moulding compound used provides a high isolation capability and a low thermal resistance between the tab and external heat sink. The isolation is equivalent to using a 100 micron mica barrier with standard product. The FULLPAK is mounted to a heat sink using a single clip or by a single screw fixing.
针脚数 3
漏源极电阻 0.18 Ω
极性 N-Channel
耗散功率 40 W
阈值电压 4 V
输入电容 1300pF @25V
漏源极电压Vds 200 V
漏源击穿电压 200 V
连续漏极电流Ids 9.80 A
输入电容Ciss 1300pF @25VVds
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 40 W
安装方式 Through Hole
引脚数 3
封装 TO-220
长度 10.63 mm
高度 9.8 mm
封装 TO-220
工作温度 -55℃ ~ 150℃
包装方式 Tube
制造应用 Industrial, Commercial, Power Management
RoHS标准 RoHS Compliant
含铅标准 Lead Free
REACH SVHC标准 No SVHC
REACH SVHC版本 2014/12/17
型号/品牌 | 代替类型 | 替代型号对比 |
---|---|---|
IRFI640GPBF Vishay Semiconductor 威世 | 当前型号 | 当前型号 |
IRFI630GPBF 威世 | 功能相似 | IRFI640GPBF和IRFI630GPBF的区别 |