VISHAY IRL630PBF.. 晶体管, MOSFET, N沟道, 9 A, 200 V, 0.4 ohm, 5 V, 2 V
The is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is universally preferred for power dissipation levels to approximately 50W. The low thermal resistance of the package contributes to its wide acceptance throughout the industry.
针脚数 3
漏源极电阻 0.4 Ω
极性 N-Channel
耗散功率 74 W
阈值电压 2 V
漏源极电压Vds 200 V
连续漏极电流Ids 9.00 A
上升时间 57 ns
输入电容Ciss 1100pF @25VVds
下降时间 33 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 74000 mW
安装方式 Through Hole
引脚数 3
封装 TO-220
长度 10.41 mm
宽度 4.7 mm
高度 9.01 mm
封装 TO-220
工作温度 -55℃ ~ 150℃
包装方式 Tube
制造应用 Industrial, Power Management
RoHS标准 RoHS Compliant
含铅标准 Lead Free