IRF9Z34STRLPBF

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IRF9Z34STRLPBF概述

功率MOSFET Power MOSFET

DESCRIPTION

Third generation Power MOSFETs from Vishay utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications.

The D2PAK is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible on-resistance in any existing surface mount package. The D2PAK is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application.

FEATURES

• Advanced Process Technology

• Surface Mount IRF9Z34S/SiHF9Z34S

• Low-Profile Through-Hole IRSiHF9Z34L/SiHF9Z34L

• 175 °C Operating Temperature

• Fast Switching

• P-Channel

• Fully Avalanche Rated

• Lead Pb-free Available

IRF9Z34STRLPBF中文资料参数规格
技术参数

漏源极电阻 0.14 Ω

极性 P-Channel

耗散功率 3.7 W

漏源极电压Vds 60 V

连续漏极电流Ids -18.0 A

上升时间 120 ns

下降时间 58 ns

工作温度Max 175 ℃

封装参数

引脚数 3

封装 D2PAK-263

外形尺寸

封装 D2PAK-263

物理参数

工作温度 -55℃ ~ 175℃

符合标准

RoHS标准 RoHS Compliant

含铅标准 Lead Free

数据手册

在线购买IRF9Z34STRLPBF
型号: IRF9Z34STRLPBF
描述:功率MOSFET Power MOSFET

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