VISHAY IRFR014PBF 晶体管, MOSFET, N沟道, 7.7 A, 60 V, 200 mohm, 10 V, 4 V
The is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The DPAK is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Power dissipation levels up to 1.5W are possible in typical surface-mount applications.
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- Dynamic dV/dt rating
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- Ease of paralleling
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- Surface-mount
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- Simple drive requirements
额定电压DC 60.0 V
额定电流 7.70 A
额定功率 25 W
针脚数 3
漏源极电阻 0.2 Ω
极性 N-Channel
耗散功率 25 W
阈值电压 4 V
输入电容 300pF @25V
漏源极电压Vds 60 V
漏源击穿电压 60 V
连续漏极电流Ids 7.70 A
上升时间 50 ns
输入电容Ciss 300pF @25VVds
下降时间 19 ns
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2.5 W
安装方式 Surface Mount
引脚数 3
封装 TO-252-3
长度 6.73 mm
宽度 6.22 mm
高度 2.38 mm
封装 TO-252-3
工作温度 -55℃ ~ 150℃
包装方式 Tube
制造应用 Power Management, Industrial
RoHS标准 RoHS Compliant
含铅标准 Lead Free
| 型号/品牌 | 代替类型 | 替代型号对比 |
|---|---|---|
IRFR014PBF Vishay Semiconductor 威世 | 当前型号 | 当前型号 |
IRFR024NTRPBF 英飞凌 | 功能相似 | IRFR014PBF和IRFR024NTRPBF的区别 |
IRFR024NTRLPBF 英飞凌 | 功能相似 | IRFR014PBF和IRFR024NTRLPBF的区别 |