VISHAY IRFU310PBF. 晶体管, MOSFET, N沟道, 1.7 A, 400 V, 3.6 ohm, 10 V, 4 V
The is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The straight lead version is for through-hole mounting applications. Power dissipation levels up to 1.5W are possible in typical surface-mount applications.
额定功率 2.5 W
针脚数 3
漏源极电阻 3.6 Ω
极性 N-Channel
耗散功率 25 W
阈值电压 4 V
漏源极电压Vds 400 V
连续漏极电流Ids 1.70 A
上升时间 9.90 ns
输入电容Ciss 170pF @25VVds
工作温度Max 150 ℃
工作温度Min -55 ℃
耗散功率Max 2.5 W
安装方式 Through Hole
引脚数 3
封装 TO-251
长度 6.73 mm
宽度 2.38 mm
高度 6.22 mm
封装 TO-251
包装方式 Tube
制造应用 Industrial, Power Management
RoHS标准 RoHS Compliant
含铅标准 Lead Free