IRFR210PBF

VISHAY  IRFR210PBF  晶体管, MOSFET, N沟道, 2.6 A, 200 V, 1.5 ohm, 10 V, 4 V

The is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The DPAK is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Power dissipation levels up to 1.5W are possible in typical surface-mount applications.

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Dynamic dV/dt rating

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Ease of paralleling

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Surface-mount

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Repetitive avalanche rated