IRLL110PBF

VISHAY  IRLL110PBF  晶体管, MOSFET, N沟道, 1.5 A, 100 V, 540 mohm, 5 V, 2 V

The is a third generation N-channel enhancement-mode Power MOSFET comes with the best combination of fast switching, ruggedized device design and low ON-resistance. The package is designed for surface-mount using vapour phase, infrared or wave soldering techniques. Its unique package design allows for easy automatic pick-and-place as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heat sinking. Power dissipation of greater than 1.25W is possible in a typical surface-mount application.

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Dynamic dV/dt rating

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Repetitive avalanche rated

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Logic-level gate drive

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RDS ON Specified at VGS = 4 and 5V

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Surface-mount