IRFD9010

IRFD9010图片1
IRFD9010图片2
IRFD9010概述

功率MOSFET Power MOSFET

DESCRIPTION

The HVMDIP technology is the key to Vishay’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of the HVMDIP design achieves very low on-state resistance combined with high transconductance and extreme device ruggedness.

FEATURES

• For Automatic Insertion

• Compact, End Stackable

•Fast Switching

• Low Drive Current

• Easy Paralleled

• Excellent Temperature Stability

• P-Channel Versatility

• Compliant to RoHS Directive 2002/95/EC

IRFD9010中文资料参数规格
技术参数

额定电压DC -50.0 V

额定电流 -1.10 A

漏源极电压Vds 50.0 V

连续漏极电流Ids 1.10 A

封装参数

安装方式 Through Hole

引脚数 4

封装 DIP

外形尺寸

封装 DIP

其他

包装方式 Tube

符合标准

RoHS标准 Non-Compliant

含铅标准 Contains Lead

数据手册

在线购买IRFD9010
型号: IRFD9010
描述:功率MOSFET Power MOSFET

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